IQE and Atomera Partner on RF GaN-on-Silicon Technology
2 reports, 1 independent
Updated Oct 23
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What happened
IQE and Atomera signed a Joint Development Agreement to jointly develop RF GaN-on-silicon technology. The collaboration combines Atomera’s Mears Silicon Technology (MST) applied to silicon substrates with IQE’s compound semiconductor epitaxy expertise. The work aims to demonstrate best-in-class linearity and loss for high-volume RF markets.
Why it matters
The partnership seeks to bring high-performance, cost-effective RF GaN to market. IQE stated that the technology has the potential to provide a cost-effective substrate capable of achieving the performance required by the market.